STMicroelectronics introduces fourth-generation STPOWER Silicon Carbide (SiC) MOSFET technology

     STMicroelectronics introduces fourth-generation STPOWER Silicon Carbide (SiC) MOSFET technology. Fourth-generation technologies are expected to become new market benchmarks in three areas: energy efficiency, power density and robustness. While meeting the needs of the automotive and industrial markets, ST has also optimized fourth-generation technology for inverters, a key component of electric vehicle drive systems. The company plans to introduce more advanced SiC technology innovations by 2027 to fulfill its innovation commitment.

     Marco Cassis, President of ST's Analog, Power and Discrete Devices, MEMS and Sensor Products Division (APMS), said: "ST is committed to bringing cutting-edge silicon carbide technology to market, driving the future of electric vehicles and energy-efficient industries. We will continue to innovate in devices, advanced packages and power modules to advance SiC MOSFET technology. In combination with our supply chain vertically integrated manufacturing strategy, we are building a resilient supply chain by providing industry-leading SiC technology to meet the growing needs of our customers and contribute to a more sustainable future."

     As the market leader in SiC power MOSFETs, ST is further advancing technological innovation to take advantage of SiC's higher energy efficiency and power density than silicon-based devices. The latest generation of SiC devices are designed to improve the electric drive inverter platform for future electric vehicles, further unlocking the miniaturization and energy saving potential. Despite the growing electric vehicle market, there are still challenges to achieving widespread adoption, and automakers are exploring the introduction of electric vehicles that are affordable to ordinary consumers. The SiC based 800V electric vehicle platform electric drive system enables faster charging speeds, reduces the weight of electric vehicles, and helps automakers produce high-end models with longer driving ranges.

     Available in 750V and 1200V voltage classes, STMicroelectronics' new SiC MOSFETs improve the energy efficiency and performance of 400V and 800V EV platform electric drive inverters, respectively. Mid-size and compact models are two important automotive segments. Bringing SiC's technological advantages down to these two markets will help make electric vehicles acceptable to the public. In addition to trams, the new generation SiC technology is also suitable for a variety of high-power industrial equipment, including growing applications such as solar inverters, energy storage solutions and data centers, helping them to significantly improve their energy efficiency.