
STMicroelectronics new STDRIVE601 three-phase gate driver is used to drive 600V N-channel power MOSFET and IGBT electrode body, stability ranks the most advanced level in the industry, can withstand negative peak voltage as low as -100V, logic input response speed within 85ns, At the same level of product first-class level.
The STDRIVE601 has built-in intelligent turn-off circuit, which can improve the start-up speed of the protection function, and immediately turn off the gate driver output when overload or short circuit is detected. The off-state duration is set with external capacitors and resistors. If necessary, the designer can set the required time with a larger C-R value without affecting the turn-off reaction time. The STDRIVE601 is equipped with fault indicator pins.
The STDRIVE601 can replace three half-bridge drivers, simplify PCB board configuration design, and optimize the performance of three-phase motor drivers to drive appliances, industrial sewing machines, industrial drives, and fans.
All outputs can be filled with 350mA current, source 200mA current, gate drive voltage range of 9V-20V, can drive n-channel power MOSFET or IGBT electrode body. The delay pairing function between the low and high sides eliminates period distortion and allows high frequency switching operation, while interlocking and dead zone features prevent cross conduction.
STDRIVE601 adopts ST's BCD6S off-line power switch process, and the drive power supply is up to 21V logic power supply voltage and up to 600V high side bootstrap voltage. The driver incorporates a bootstrap diode for bill of material cost savings, and both the low - and high-side drive circuits feature Under-Voltage Lockout (UVLO) to prevent the power switch from performing in inefficient or hazardous conditions.
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