STMicroelectronics introduces standard threshold 40V MOSFETs using an enhanced version of STripFET F8 technology

     ST introduces the standard threshold voltage (VGS(th)) 40V STripFET F8 MOSFET transistor, a new family that combines the benefits of enhanced trench gate technology with excellent noise resistance for non-logical level control applications.

     The industrial grade transistor STL300N4F8 and the vehicle gauge transistor STL305N4F8AG have drain current ratings of more than 300A and a maximum on-resistance RDS(on) of 1mΩ for excellent energy efficiency in high power applications. More than 300a and a maximum on-resistance RDS(on) of 1m ω for excellent energy efficiency in high power applications. Dynamic performance has been improved, with a total gate charge of 65nC(typical) and low capacitance (Ciss, Crss) ensuring minimum power loss at high switching frequencies. The low forward voltage and fast reverse recovery characteristics of MOSFET body diodes help improve the energy efficiency and reliability of the system.

     With the new family of devices, designers can use ST's latest STripFET F8 technology to design power supplies, power converters, and motor drives for wireless power tools, industrial production tools, and more. The energy efficiency of MOSFETs increases battery life and reduces power dissipation, allowing applications to consistently deliver high power with a simple thermal management design, saving board space and reducing material costs. The target applications for vehicle gauge devices are complete vehicle motor drives and DC/DC converters, including body electronics, chassis and powertrain. Specific application scenarios include window lifters, seat positioners, sunroof openers, fans and blowers, electric power steering, active suspension and emission reduction control systems.

     ST STripFET F8 technology ensures high robustness and a larger safe working area (SOA), the ability to handle high power and withstand the large drop in drain-source voltage (VDS) caused by high power. In addition, the maximum operating junction temperature of 175°C makes the MOSFET suitable for extremely harsh operating environments.

     In addition, the technology can reduce the bare chip size, reduce the on-resistance RDS(on), improve price competitiveness, and adopt a compact package. Both devices are available in a space-saving PowerFLAT 5x6 package and are also available in the wettable wing package required by the automotive industry.