STMicroelectronics releases MasterGaN Reference Design and demonstrates 250W radiator-less resonant converter

     STMicroelectronics has released the first reference design for MasterGaN, demonstrating how new highly integrated devices can improve power density, energy efficiency, simplify product design and reduce time to market. The EVLMG1-250WLLC reference design is a 250W resonant converter with board dimensions of 100mm x 60mm and a maximum component height of 35mm. The power chip is MasterGaN1, which integrates a STDRIVE half-bridge gate driver and two 650V normally off GaN transistors. It has matching timing parameters, an on-resistance (Rds(on)) of 150mΩ, a maximum rated current of 10A, and logic inputs compatible with 3.3V to 15V signals.

     MasterGaN1 is suitable for high-efficiency soft-switching topologies in AC/DC power supplies, DC/DC converters and DC/AC inverter applications up to 400W, including resonant converters, active clamp flyback or forward converters, and bridgless totem pole PFC(power factor correction).

     Taking advantage of the high energy efficiency of GaN power transistors, the reference design uses a radiator-free design on the primary side. In addition, the switching performance of GaN transistors is excellent and the operating frequency is higher than that of ordinary silicon-based MOSFET solutions, so smaller electromagnetic components and capacitors can be used to achieve higher power density and lower bill of material costs.

     The EVLMG1-250WLLC is a nominal 400V input power reference design that offers a 24V/10A output port with a maximum energy efficiency of over 94%. Thanks to MasterGaN's integrated safety features, the converter output has short-circuit and overcurrent protection. It also has undervoltage protection and input voltage monitoring functions, and the voltage detection function can realize power-on sequencing in multiple DC/DC converters to prevent the motor from starting at low voltage.

     STMicroelectronics' MasterGaN family of products consists of pin-compatible integrated half-bridge products, including symmetric and asymmetric configurations, in a thin 9mm x 9mm GQFN package. The rated voltage of the internal circuit of the package is up to 650V, and the creepage distance between the high and low pads is more than 2mm. The MasterGaN module is suitable for various power ratings, and engineers can extend and upgrade the system design with a few hardware modifications.