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Samsung has announced its largest-capacity 12nm 32Gb DDR5 DRAM product

Sep 12 2023 2023-09 Semiconductors Samsung Electro-Mechanics
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Samsung announced that it has developed its largest capacity 32Gb DDR5 DRAM (DDR5 DRAM: five generations of double data rate synchronous dynamic random access memory) using a 12-nanometer (nm) process technology. This is another achievement after Samsung began mass production of 12nm 16Gb DDR5 DRAM in May 2023, which solidifies Samsung's position in the field of developing next-generation DRAM memory technology and opens a new chapter in the era of large-capacity memory.

     Samsung announced that it has developed its largest capacity 32Gb DDR5 DRAM (DDR5 DRAM: five generations of double data rate synchronous dynamic random access memory) using a 12-nanometer (nm) process technology. This is another achievement after Samsung began mass production of 12nm 16Gb DDR5 DRAM in May 2023, which solidifies Samsung's position in the field of developing next-generation DRAM memory technology and opens a new chapter in the era of large-capacity memory.

 

     On the basis of Samsung's latest 12nm 32Gb memory, we can develop solutions to implement 1TB memory modules, which will help meet the growing demand for large-capacity DRAM memory in the era of artificial intelligence and big data. We will continue to develop memory solutions through differentiated process and design technology to break through the bottleneck of memory technology.

 

     Samsung developed the first 64 kilobit (Kb) memory in 1983, and has increased the memory capacity by 500,000 times over the past 40 years. The newly developed 32Gb DDR5 memory particles, using cutting-edge process technology, improve the integration density and optimize the package design, compared to DDR5 16Gb particles in the same package size, Samsung's single chip DRAM memory particle capacity doubled.

 

     In particular, DDR5 128GB memory modules manufactured using 16Gb memory pellets in the past required a through-silicon (TSV) process. Now, by using the newly developed 32Gb memory particles, 128GB memory modules can be produced without using the through-silicon (TSV) process. The power consumption is reduced by about 10% compared to a 128GB memory module that uses a 16Gb memory package. This technological breakthrough makes the product a preferred solution for businesses concerned with energy efficiency, such as data centers.

 

     Based on 12nm 32Gb DDR5 DRAM, Samsung plans to continue to expand its lineup of high-capacity memory products to meet the growing demands of the high-performance computing and IT industries. By offering 12nm 32Gb of memory to data centers, as well as customers adopting applications such as artificial intelligence and next-generation computing, Samsung hopes to solidify its position at the forefront of the next-generation memory market. In the future, the product will also play a vital role in Samsung's long-term cooperation with other core industry partners.

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