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Samsung introduces the industry's first HBM2E memory product, which improves performance by 33%

Aug 19 2019 2019-08 Power Samsung
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Samsung has released its new Flashbolt High Bandwidth Memory (HBM), which it claims is the industry's first HBM2E compliant memory product. The company's new Flashbolt memory stack increases performance by 33% and offers double the capacity per chip as well as double the capacity per package.

     Samsung has released its new Flashbolt High Bandwidth Memory (HBM), which it claims is the industry's first HBM2E compliant memory product. The company's new Flashbolt memory stack increases performance by 33% and offers double the capacity per chip as well as double the capacity per package. Samsung introduced HBM2E DRAM at GTC, a fitting occasion as NVIDIA is one of the biggest users of HBM2 memory thanks to its popular GV100 processor.

 

     Samsung's Flashbolt KGSD is based on eight 16-Gb memory chips that interconnect in an 8-Hi stack configuration using TSV (via silicon through-holes). Each Flashbolt package has a 1024-bit bus with a data transfer rate of 3.2 Gbps per pin, so it can provide up to 410GB/s bandwidth per KGSD. The new generation increases the bandwidth per pin by 33% - from 2.4Gbps to 3.2Gbps; In addition, the capacity of each chip has also doubled to 16Gb. As a result, Flashbolt encapsulation of the 1024-bit bus can provide up to 410GB/s bandwidth and 16GB capacity in an 8-Hi stack configuration.

 

     Samsung is positioning its Flashbolt KGSD to target next-generation data center, HPC, AI/ML, and graphics applications. By using four Flashbolt stacks of processors with 4096-bit memory interfaces, developers can get 64GB of memory with 1.64TB/s peak bandwidth, which will be a big advantage for chips with high capacity and bandwidth requirements. Using two KGSDS, they get 32GB of DRAM with a peak bandwidth of 820GB/s. Samsung said it has not yet started mass production of Flashbolt HBM2E memory, but has completed development of the technology.

 

     Samsung Flashbolt KGSD has a 4096-bit wide memory interface, through the way of four Flashbolt stacks, let developers get 64GB video memory, up to 1.64TB/s peak bandwidth, large capacity and high bandwidth is the advantage of this chip, but also to better deal with various practical needs. With two Flashbolt KGSDS, you can get up to 32GB of video memory and a peak bandwidth of 820GB/s.

 

     Samsung aims to use these products for next-generation data centers, AI/ML (artificial intelligence/machine learning) and graphics applications. At present, Samsung has not announced the HBM2E product mass production plans, but Flashbolt is expected to enter the next generation of 7nm Gpus in the future.

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