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Samsung is preparing to launch the 10th generation V-NAND with more than 400 layers

Dec 18 2024 2024-12 Passive Components Samsung
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Samsung has yet to launch full-fat PCIe 5.0 SSDS in the retail market - we're not really counting PCIe 5.0 x2 / PCIe 4.0 x4 990 Evo and 990 Evo Plus - but it's preparing flash drives, The flash will be able to power only fast PCIe 5.0 SSDS, but can also support next-generation PCIe 6.0 drives. The new 4xx layer 3D NAND device will have interface speeds of up to 5.6 GT/s and will be unveiled at the upcoming International Solid-State Circuits Conference (ISSCC).

     Samsung has yet to launch full-fat PCIe 5.0 SSDS in the retail market - we're not really counting PCIe 5.0 x2 / PCIe 4.0 x4 990 Evo and 990 Evo Plus - but it's preparing flash drives, The flash will be able to power only fast PCIe 5.0 SSDS, but can also support next-generation PCIe 6.0 drives. The new 4xx layer 3D NAND device will have interface speeds of up to 5.6 GT/s and will be unveiled at the upcoming International Solid-State Circuits Conference (ISSCC).

 

     Samsung's ultra-fast 10th-generation V-NAND memory retains the TLC (three-level cells, or three bits per cell) architecture, with a capacity of 1Tb (128 GB) per chip. Samsung claims that its new 4xx layer 3D TLC NAND has a storage density of 28 Gb/mm. . That's only slightly less than Samsung's 1Tb 3D QLC V-NAND, which has a storage density of 28.5 Gb/mm. It is the density of non-volatile memory in the world.

 

     Current NAND chips typically have 8 or 16 NAND chips per package. This means that a 16-chip package will provide up to 2TB of storage, four such packages on a single-sided SSD will provide 8TB of storage, or up to 16TB on a double-sided M.2 2280 drive. (Note that Samsung hasn't introduced a new double-sided SSD for quite some time, opting instead to stick with the single-sided design.)

 

     It can be said that the important feature of Samsung's 10th generation V-NAND is its interface speed: 5.6 GT/s, which is significantly faster than the 3.6 GT/s of Changjiang Storage Xtacking architecture memory. At 5.6 GT/s, this equates to about 700 MB/s, which means that 10 such devices can saturate the PCIe 4.0x4 interface, while 20 are enough to saturate the ultra-fast PCIe 5.0x4 interface. That's what drives the fast options in the world of SSDS. Up to 32 chips can be contained in two NAND packages, which is already half the PCIe 6.0x4 interface throughput.

 

     Samsung plans to launch its 10th-generation V-NAND memory at ISSCC 2025, and it is reasonable to expect the company to begin mass production of this non-volatile memory next year as well. Unfortunately, it's not clear when the new memory will make its way into Samsung's own SSDS. Typically, new NAND solutions are available for a variety of retail products, including USB drives, memory cards, SSDS, smartphones, and more.

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