SemiQ has added the S7 package to its line of QSiC high-performance power modules

     SemiQ has added a new S7 package to its QSiC SiC power module family, which consists of 1200 v half-bridge MOSFETs and Schottky diode modules. These components give power engineers greater design flexibility by providing compact, efficient and high-performance options for new designs. They also help to seamlessly replace older systems that need to be more efficient.

     The latest announcement includes the release of four new electronic modules: the 529A MOSFET module (GCMX003A120S7B1), 348A MOSFET module (GCMX005A120S7B1) and two low noise SiC Schottky diode half-bridge modules (GHXS300A120S7D5 and GHXS400A120S7D5). The modules come in an S7 package with a size of 62.0 mm and a height of 17.0 mm.

     The new package addresses the specific size, weight, and power needs of a variety of demanding applications, including induction heaters, welding equipment, uninterruptible power supplies (UPS), photovoltaic and wind inverters, energy storage systems, high-voltage DC-DC converters, and battery charging systems for electric vehicles (EVs). In addition to the tiny size of the modules, their high efficiency and low loss operation minimizes heat dissipation in the system and allows for the use of smaller radiators.

     SemiQ's goal is to provide a broad range of SiC technologies that enable designers to improve the efficiency, performance and size of today's demanding applications. The introduction of new packaging options for the 1200 v QSiC MOSFETs and SiC diode module family expands the range of options for designers seeking to develop new applications or enhance existing systems without the need for extensive redesign.

     SemiQ's modules are made of high-performance ceramics, which enables them to achieve exceptional levels of performance. These modules also offer higher power density and allow for more compact designs, especially in high frequency and high power Settings.

     To ensure that each module has a consistent gate threshold voltage and high-quality gate oxides, SemiQ performs gate burn tests at the wafer level. In addition to burn-in tests that help reduce external failure rates, several stress tests are used to meet the quality standards required for automotive and industrial applications. These stress tests include gate stress, high temperature reverse bias (HTRB) drain stress, and high humidity, High Pressure, High temperature (H3TRB). All components are tested to over 1400 volts.