SiC solutions for energy infrastructure and industrial drive applications

     Onsemi's elite esic SiC) family of solutions. The portfolio includes diodes, MosFETs, IGBTs and SiC diode PIMs, as well as aec-q100 qualified devices. These devices are optimized to provide reliable, efficient performance for energy infrastructure and industrial drive applications. Renewable energy and high-power industrial applications require a high breakdown voltage, as provided by the 1700V NTH4L028N170M1 elite MOSFET.

     The device offers a maximum gate source voltage range of -15V to +25V, making it ideal for fast switching applications, where the gate voltage grows to -10V, providing better system reliability. The 1700V EliteSiC MosFETs achieved a market-leading gate charge (Qg) of 200nC at 1200V test conditions at 40A.

     This low Qg allows the device to achieve high efficiency in fast switching, high-power renewable energy applications. With a BV rating of 1700V, the NDSH25170A and NDSH10170A elite ic Schottky diodes provide an improved margin between the maximum reverse voltage of the diode and the peak repeat reverse voltage.

     These devices also enable designers to achieve stable high-pressure operations at high temperatures, while providing the high efficiency achieved by SiC. Whether it's electric vehicle charging stations, a grid that uses renewable energy, or high-voltage/high-current industrial drive applications, these solutions deliver best-in-class efficiency and reduce power consumption.