Stmicro has released the MasterGaN reference design and demonstrated the 250W radiatorless resonant converter

     Stmicroelectronics has released MasterGaN's first reference design, showing how new highly integrated devices can improve power density, energy efficiency, simplify product design and shorten time-to-market.

     The EVLMG1-250WLLC reference design is a 250W resonant converter with a circuit board size of 100mm x 60mm and a maximum component height of 35mm. The power chip is a MasterGaN1 integrated with a STDRIVE half-bridge gate driver and two 650V normal-off GaN transistors. It has matching timing parameters, an on-resistance (Rds(ON)) of 150Mω, a maximum rated current of 10A, and logic input compatible with 3.3V to 15V signals.

     Mastergan1 is suitable for high -efficiency soft switching topology in the application of up to 400W AC/DC power supply, DC/DC converter and DC/AC inverter application, including resonance converters, active clamps against or positively stimulating transformers, and no Bridge Totten Pillar PFC (power factor correction).

     Using the high -energy effect of the GAN power transistor, the reference design uses the radiator design at once. In addition, the switching performance of the GAN transistor is excellent, and the operating frequency is higher than that of the ordinary silicon -based MOSFET solution. Therefore, it can use smaller electromagnetic elements and capacitors to achieve higher power density and lower material list costs.

     EVLMG1-250Wllc is a power reference design named 400V input, which provides a 24V/10A output port with a maximum energy efficiency of more than 94 %. Thanks to the security function of the internal integration of Mastergan, the output of the converter has short circuit and overcurrent protection functions. It also has an underwriter protection and input voltage monitoring function. The voltage detection function can achieve electric sorting in multiple DC/DC converters to prevent the motor from starting at low voltage.

     The Mastergan series products of the SEF semiconductor are composed of integrated semi -bridge products, including symmetry and asymmetric configuration, and are encapsulated with a thin 9mm x 9mm thin GQFN. The rated voltage of the packaging internal circuit is up to 650V, and the climbing distance between high and low voltage pads exceeds 2mm. The mastergan module is suitable for a variety of rated power. The engineer can make a hardware modification to expand the system design.