Stmicro introduces 40V STripFET F8 MOSFET transistor

     STL320N4LF8 and STL325N4LF8AG 40V MOSFET transistors reduce the on-resistance and switching losses, while optimizing the body parasitic diode characteristics, reduce power conversion, motor control and distribution circuit energy consumption and noise

     The new 40V N-channel enhanced MOSFET utilizes the latest generation STPOWER STripFET F8 oxy-filled groove technology to achieve superior quality factor. When the gate-source voltage (VGS) is 10V, the maximum on-resistance (Rds(on)) of STL320N4LF8 and STL325N4LF8AG are 0.8mm and 0.75mm, respectively. The very low bare sheet per unit area (Rds(on)) resistance of the new MOSFETs allows for a space-saving and thermally efficient PowerFLAT 5x6 package.

     Stmicro's advanced STripFET F8 technology offers excellent switching speed and low chip capacitance that minimizes dynamic parameters such as gate leakage charge and improves system energy efficiency. Designers can select switching frequencies from 600kHz to 1MHz, allowing the use of smaller-sized capacitors and magnetic components, saving circuit size and bill of material costs and improving power density for end-use applications.

     Appropriate OUTPUT CAPACITORS AND ASSOCIATED EQUIVALENT SERIES RESISTORS PREVENT DRAIN-SOURCE VOLTAGE SPIKES AND ENSURE SHORTER DROP-OFF OSCILLATIONS WHEN THE TUBE IS TURNED OFF. With this and the soft recovery characteristics of the body diodes, the STL320N4LF8 and STL325N4LF8AG emit less electromagnetic interference (EMI) than other similar devices on the market. In addition, the reverse recovery charge of the bulk parasitic diode is small, which can minimize the energy loss of the hard switching topology.

     Gate threshold voltages (VGS(th)) are strictly controlled in STL320N4LF8 and STL325N4LF8AG to ensure that the difference in threshold voltages between devices is small in order to parallel multiple MOSFET power tubes to handle larger currents. Short-circuit tolerance is also excellent, withstanding currents up to 1000A (pulses shorter than 10µs). The STL320N4LF8 and STL325N4LF8AG are the first industry-standard and AEC-Q101 automotive standard STPOWER STripFET F8 MOSFET devices, ideal for battery-powered products and for computing, telecommunications, lighting and general purpose power conversion applications, respectively.