Stmicro's new MDmesh K6 800V STPOWER MOSFET improves energy efficiency and minimizes switching power losses

     Stpower MDMMESH K6 new series super crystalline pipes improve multiple key parameters, minimize system power loss, especially suitable for lighting applications based on anti -exciting topology. Essence

     The ST Semiconductor 800V Stpower MDMESH K6 series has set a benchmark for high -performance and easy -to -use for this super crystalline tube technology. The RDS (ON) X -area parameter of the MDMMESH K6 is at the leading level among the 800V products in the market, and it can achieve compact high -power density and market leading energy efficiency in a new new design.

     In addition, the K6 series has a lower threshold voltage than the previous generation MDmesh K5 and can be driven with lower voltage, resulting in lower power consumption and higher energy efficiency, mainly for zero-power standby applications. The total gate charge (Qg) is also very low, enabling high switching speeds and low losses.the integration of an ESD protection diode on the chip increases the overall robustness of the MOSFET to Human body model (HBM) level 2.

     "We have evaluated samples of the new Ultra junction Ultra high voltage MDmesh K6 series and were impressed by the excellent Rdson* area and total gate charge (Qg) performance features," said Luca Colombo, CTO and R&D manager at Italian solid state lighting innovator TCI.

     STP80N240K6 (RDS(on)max = 0.22Ω, Qgtyp = 25.9nC) is the first MDmesh K6 MOSFET with TO-220 through-hole package. ST eSTore online store now offers free samples. The DPAK and TO-220FP versions will go into mass production by January 2022. Orders for 1000 units start at $1.013 each.Ststmicroelectronics will launch the full MDmesh K6 portfolio by 2022, expanding the on-resistance RDS(on) range from 0.22Ω to 4.5Ω and adding a range of package options, including SMD and through-hole housing.