Stmicro's robust isolated SiC gate drivers come in a narrow SO-8 package to save space

     Stmicro's STGAP2SiCSN is a single-channel gate driver optimized for controlling silicon carbide MOSFETs in a space-saving narrow-body SO-8 package with robust performance and precise PWM control.It comes in a 5mm x 4mm wide-body SO-8N package

    SiC power technology is widely used to improve power conversion efficiency, SiC driver STGAP2SiCSN can simplify the design of energy saving power systems, drive and control circuits, save space, and enhance robustness and reliability. Target applications include electric vehicle charging systems, switching power supplies, high-voltage power factor correctors (PFC), DC/DC converters, uninterruptible power supplies (UPS), solar power generation, motor drive equipment, fans, factory automation, household appliances, induction ovens.

     The STGAP2SiCSN has current isolation between the gate drive channel and the low voltage control, and can tolerate voltages up to 1700V on the high voltage rail. Input to output propagation time is less than 75ns, to ensure high precision PWM control. ±100V/ns common-mode transient immunity (CMTI) ensures switching reliability. Built-in protection features include undervoltage locking and thermal shut-off. Undervoltage locking (UVLO) prevents SiC power switches from operating under low energy efficiency or unsafe conditions through a threshold voltage. After the junction temperature is detected to be too high, a thermal shutdown reduces both outputs of the drive.

     The new product offers two configuration options, a standalone multi-output configuration that uses external resistors to individually optimize on-off and turn-off times, and a single-output configuration with source Miller clamps to enhance robustness in high-frequency hard switching applications, using Miller clamps to prevent excessive power switch oscillations.

     The STGAP2SiCSN logic input is compatible with TTL and CMOS logic signals as low as 3.3V, simplifying the connection to the main microcontroller or DSP processor. At gate drive voltages up to 26V, the driver has a maximum draw current and pull current of 4A. The on-chip integrated bootstrap diode simplifies the design and improves reliability, and the switch-off mode has independent input pins, helping to minimize system power consumption.