Stmicroelectronics' new silicon Carbide power module improves electric vehicle performance and range

     Stmicro's new five silicon carbide MosFet-based power modules offer automakers a flexible choice that covers a number of different power ratings and supports the operating voltages commonly used in electric vehicle (EV) drive systems. Using Stmicro's ACEPACK DRIVE package optimized for electric drive systems, these power modules use sintering technology to improve reliability and have strong robustness for easy integration into electric drive systems. The main power semiconductor inside the module is stmicroelectronics third generation (Gen3) STPOWER silicon carbide MOSFET power transistor, with industry-leading quality factor (RDS(ON) x chip area), extremely low switching energy and super synchronous rectification performance.

     Marco Monti, President of stmicroelectronics Automotive and Discrete Devices Products, said: "The ST Silicon Carbide solution enables major automotive Oems to lead the electric vehicle development race, and our third generation SiC technology ensures that the power transistors achieve the desired power density and energy efficiency, allowing vehicles to achieve outstanding performance, range and charging time."

     Hyundai Motor Company, a major player in the electric vehicle market, has selected stmicroelectronics' ACEPACK DRIVE SiC-MOSFET Gen3 power modules to develop the latest E-GMP electric vehicle platform, which will be used in Kia's EV6 model. Mr. Sang-Cheol Shin, Inverter Engineering Design Team, Hyundai Motor Group, said, "stmicroelectronics' SiC- MosFet-based power module is the right choice for us to develop electric drive inverters that can achieve a longer range. Leveraging ST's continued technology investments and as a semiconductor vendor's key role in the EV revolution, the collaboration between the two companies is an important step toward more sustainable electric vehicles."

     As an industry pioneer in silicon carbide technology, stmicroelectronics STPOWER SiC devices have been installed in more than three million production passenger vehicles worldwide. Compared with traditional silicon-based power semiconductors, SIC devices are smaller in size and can handle higher operating voltages, achieve faster charging speeds and superior vehicle power performance. Silicon carbide also improves energy efficiency, extends range and improves reliability. Many systems in electric vehicles use large amounts of silicon carbide components, such as DC-DC converters, electric drive inverters, and two-way on-board chargers (OBCs) that send power from a battery pack back to the grid.

     As a vertically integrated manufacturer (IDM), stmicroelectronics' silicon Carbide strategy is to ensure product quality and supply security, and serve the electric strategy of automobile manufacturers. Stmicroelectronics is moving quickly to support the market's rapid transition to electric vehicles, and just recently announced the establishment of a fully integrated silicon carbide substrate manufacturing plant in Catania, Italy, which is expected to begin production in 2023.