Superjunction MOSFETs that bring superior performance to Bridges and ZVS converters

     STMicroelectronics MDmesh DM6 600V MOSFETs contain a fast recovery diode, Bring the performance benefits of the company's latest super-junction technology to full-bridge and half-bridge topologies, zero-voltage switching (ZVS) phase-shift converters, and other applications and topologies that typically require a stable and reliable diode to handle dynamic dV/dt.

     The MDmesh DM6 MOSFET utilizes ST's advanced carrier lifetime control technology to reduce reverse recovery time (trr) and minimize diode power dissipation during shutdown after continuation. Optimized recovery softness enhances product reliability. In addition, extremely low gate charge (Qg) and on-resistance (RDS(ON)) and capacitance curves optimized for light loads enable applications to achieve higher operating frequencies and higher energy efficiency, simplify thermal management designs and reduce EMI interference.

     These new devices are ideal for electric vehicle charging stations, telecommunications equipment or data center power converters and solar inverters, where more stable performance and higher power density allow applications to design better power ratings.

     The MDmesh DM6 series is part of the STPOWER™ portfolio, with a total of 23 products, rated output current range 15A to 72A, gate charge (Qg) 20nC to 117nC, RDS(ON) resistance 0.240Ω to 0.036Ω, in a mainstream power package. Includes the new low-inductor leadless TO-LL, PowerFLAT 8x8 HV, D2PAK, TO-220 and TO-247, of which TO-247 is equipped with short leads, long leads or Kelvin pins for applications requiring precision current detection.