TI launches the industry's first 80V half-bridge GaN FET module

     Texas Instruments has introduced the industry's first 80V, 10A integrated Gallium nitride (GaN) field-effect transistor (FET) power stage prototype. The prototype consists of a high-frequency driver in a quad flat leadless (QFN) package and two GaN FETs in a half-bridge configuration, making it very easy to design.

     The new LMG5200 GaN FET power stage prototype will help accelerate the marketization of next-generation GaN power conversion solutions that deliver higher power density and efficiency for space-constrained, high-frequency industrial and telecommunications applications.

     Steve Lambouses, vice president of TI's High-voltage Power Solutions business unit, said: "One of the challenges facing GAN-based power supply designs in the past has been the uncertainty associated with driving GaN FETs, as well as parasitic effects caused by packaging and design layouts. "We will use a complete, reliable power conversion ecosystem of advanced, easily design-packaged, optimized integrated modules, drivers, and high-frequency controllers to enable designers to realize the full potential of GaN technology for power applications."

     Typically, designers using GaN FETs for switching at high frequencies must be careful with board layout wiring to avoid ringing and electromagnetic interference (EMI). TI's LMG5200 dual 80V power stage prototype greatly simplifies this problem while increasing power stage efficiency by reducing packaged parasitic inductance in the critical gate drive loop. The LMG5200 features advanced multi-chip packaging technology optimized to support power conversion topologies up to 5MHz.

     The easy-to-use 6mmx8mm QFN package eliminates the need for bottom padding, greatly simplifying the manufacturing process. The reduction in package size further enhances the application value of GaN technology and helps to expand the use of GaN power supply design, including many new applications from high-frequency wireless charging applications to 48V telecommunications and industrial design.