Teledyne e2v HiRel has added two new high-power GaN HEMTs to its 650 V range

     Teledyne e2v HiRel has added two new durable GaN Power HEMTs (High electron mobility Transistors) to its family of 650 volt industry-leading high power products based on GaN Systems technology. The two new high-power HEMTs - the TDG650E30B and TDG650E15B - offer lower current performance of 30A and 15A respectively, compared to the first 650 V product introduced last year, the TDG650E60, which offers 60A.

     These 650 V GaN HEMTs are the highest voltage GaN power devices on the market and are ideal for demanding high-reliability military, avionics and space applications such as power supply, motor control and half-bridge topology. Equipped with bottom-cooled units, these devices feature ultra-low FOM Island Technology chips and low-inductance GaNPX packages that provide ultra-high frequency switches greater than 100 Mhz, fast and controllable fall and rise times, reverse current capabilities, and more.

     Mont Taylor, Vice President of Business Development at Teledyne e2v HiRel, said: "We are excited to continue building the 650 V Series of high-power GaN HEMTs for applications such as aviation that require the highest reliability. We are confident that the smaller packages of these new devices will be a real benefit to customers designing for the highest power density projects." Both TDG650E15B and TDG650E30B are enhanced GaN power transistors on silicon that enable high current, high voltage breakdown, and high switching frequencies while providing very low junction to case thermal resistance for high-power applications.

     Gallium nitride devices have revolutionized power conversion components in other industries and are now available in radiation-resistant plastic packages that undergo rigorous reliability and electrical testing to ensure mission-critical success. The release of these new GaN HEMTs provides customers with the efficiency, size and power density benefits required for critical aerospace and defense power applications.

     For all product lines, Teledyne e2v HiRel performs the most stringent certification and testing for the highest reliability applications. For power devices, these tests include sulfuric acid testing, high-altitude simulation, dynamic aging, step stress at ambient temperatures up to 175°C, 9 volt gate voltage, and full temperature testing. Unlike silicon carbide (SiC) devices, the two devices can be easily implemented in parallel to increase load current or reduce effective on-resistance (RDSon).