Texas Instruments DRV8300U three-phase smart gate driver

     Texas Instruments DRV8300U Three-phase Gate drivers feature three half-bridge gate drivers with a voltage of 100V, each capable of driving both a high - and low-side n-channel power MOSFET. The DRV8300UD uses an integrated bootstrap diode and an external capacitor to generate the correct gate drive voltage for a high-side MOSFET. GVDD is used to generate a gate drive voltage for a low-side MOSFET.

     Its gate drive architecture supports up to 750mA of pull current and 1.5A of fill current.Phase pin SHx tolerates significant negative voltage transients. At the same time, high-side gate driver power supplies BSTx and GHx support higher positive voltage transients (125V absolute maximum), thus improving system robustness.

     The smaller propagation delay and delay matching performance specifications minimize dead zone time requirements, further improving efficiency. Undervoltage protection for the low and high sides of the Texas Instruments DRV8300U is provided through GVDD and BST undervoltage locking.