Texas Instruments UCC5871-Q1 IGBT/SiC MOSFET grid driver

Texas Instruments UCC5871-Q1 IGBT/SiC MOSFET gate driver is an isolated, highly configurable, single-channel gate driver designed to drive high-power SiC MosFets and IGBTs in EV/HEV applications. Power transistor protection, such as shunt resistor-based overcurrent, NTC-based overheat and DESAT detection, includes optional soft or two-stage shutdowns for these failures.

To further reduce application size, the Texas Instruments UCC5871-Q1 incorporates a 4A active Miller clamp when switched on and off, and an active grid pull-down feature when the drive is powered off. The integrated 10-bit ADC supports monitoring of up to six analog inputs and gate driver temperatures for enhanced system management. Integrated diagnostic and detection functions simplify system design.

The parameters and thresholds for these characteristics can be configured through the SPI interface so that the device can be paired with almost any SiC mosFETs or IGBTs.

Features

● Separate output driver provides 30A peak pull current and 30A peak fill current.
● Interlock and breakdown protection with 150ns (maximum) propagation delay and programmable minimum pulse suppression
● Primary side and secondary side active short circuit (ASC) support
● Configurable power transistor protection
-   Short circuit protection based on DESAT
-   Overcurrent and short circuit protection based on shunt resistance
-   Ntc-based overheating protection
-   Programmable soft Off (STO) and two-stage Off (2LTOFF) in case of power transistor failure
● Integrated diagnosis
-   Built-in self-check (BIST) to protect the comparator
-   IN+ to transistor gate path integrity
-   Power transistor threshold monitoring
-   Internal clock monitoring
-   Fault alarm (nFLT1) and warning (nFLT2) output
● Meet functional safety standards
-   Developed for functional safety applications
-   Documentation available to assist with ISO 26262 system design (up to ASIL D)
● Integrated 4A active Miller clamp or optional external drive for Miller clamp transistors
● Advanced high pressure clamp control
● Internal and external power supply undervoltage and overvoltage protection
● Active output dropdown and default low output, power or floating input low
● Driver naked chip temperature detection and overheat protection
● Common-mode transient suppression (CMTI) : 100kV/µs (minimum, VCM=1000V)
● Spi-based device reconfiguration, validation, monitoring, and diagnosis
● Integrated 10-bit ADC for power transistor temperature, voltage and current monitoring

Applications

● HEV and EV traction inverters
● HEV and EV power modules