Semiconductors
Passive Components
Sensors
Power
Optoelectronics
Texas Instruments introduces 11 new n-channel power MOSFETs in its NexFET product line, including the 25-V CSD16570Q5B and 30-V CSD17570Q5B with the industry's lowest on-resistance and in a QFN package for hot-swapable and ORing applications. In addition, TI's new 12-V FemtoFET CSD13383F4 for low-voltage battery-powered applications achieves an extremely low resistance of 84 percent lower than competing devices in a slim 0.6 mm x 1mm package.
The CSD16570Q5B and CSD17570Q5B NexFET MOSFETs provide high power conversion efficiency at higher current conditions while ensuring safe operation in computer servers and telecommunications applications. For example, the 25-V CSD16570Q5B supports a maximum on-resistance of 0.59 mΩ, while the 30-V CSD17570Q5B achieves a maximum on-resistance of 0.69 mΩ. Download and read a 12V, 60A hot-swappable reference design with TI CSD17570Q5B NexFET to learn more.
TI's new CSD17573Q5B and CSD17577Q5A can be used with the LM27403 for DC/DC controller applications to form a complete synchronous buck converter solution. The CSD16570Q5B and CSD17570Q5B NexFET power MOSFETs can be used with TI hot-swap controllers such as the TPS24720.
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