Texas Instruments provides LMG5200 half bridge GaN power level, highly integrated high side and low side grid drivers

     Texas Instruments' LMG5200 device, 80v, 10a driver plus GaN half-bridge power stage, provides an integrated power level solution using enhanced mode gallium nitride (GaN) FETs. The device consists of two 80 V GaN Fets driven by a semi-bridge structure of high frequency GaN FET drivers.

     GaN FeTs have significant advantages in power conversion because of their near zero reverse recovery and very small input capacitance C(ISS). All components are installed on a completely leadless packaging platform with minimal packaging parasitic components. The LMG5200 device is available in a lead-free package of 6 mm x 8 mm x 2 mm and can be easily installed on PCBS.

     TTL logic compatible inputs can withstand up to 12v input voltage regardless of V(CC) voltage. Proprietary bootstrap voltage clamping technology ensures that the grid voltage of the enhanced mode GaN FeTs is within a safe operating range.

     The device extends the benefits of discrete GaN FeTs by providing a more user-friendly interface. It is an ideal solution that requires high frequency, high efficiency operation in a small form factor. When used with the TPS53632G controller, the LMG5200 is capable of direct conversion from 48 V to the point of load voltage (0.5 V to 1.5 V).