The 950 V CoolMOS™ PFD7 series meets the needs of high power lighting systems and industrial SMPS applications

     To meet today's demand for smaller, more energy-efficient products, Infineon Technologies has introduced the CoolMOS™ PFD7 high-voltage MOSFET family, which sets a new industry standard for 950V overjunction (SJ) technology. The new 950V series offers excellent performance and ease of use with integrated fast body diodes that ensure device robustness while reducing BOM costs. The product is tailored for ultra-high power density and ultra-high efficiency product designs, primarily for lighting systems and switching power supply (SMPS) applications in consumer and industrial sectors.

     The new product family is suitable for flyback, PFC, and LLC/LCC designs, including half-bridge or full-bridge configurations that make power reversal stable and reliable. By integrating ultra-fast body diodes with ultra-low reverse recovery charge (Qrr), the family achieves the robustness and reliability of hard commutation and becomes a more robust superjunction MOSFeTs in this voltage class, suitable for all topologies in target applications.

     In addition, the significant reduction in switching losses (EOSS, QOSS, and QGS) also improves the efficiency of hard and soft switching applications, reducing the temperature of the MOSFET by up to 4 Kelvin compared to the 900V CoolMOS C3 overjunction MOSFET. The new product is more environmentally friendly than before, increasing its light-load and full-load PFC efficiency by more than 0.2% while meeting LLC efficiency requirements.

     The new product family reduces the on-going resistance (RDS(on)) values of various SMD and THD packaged devices by up to 55%, such as 450 mΩ in DPAK or 60 mΩ in TO247. Designers can reduce BOM costs and production costs by reducing package size, greatly increasing power density and saving board space. The grid - source threshold voltage (V(GS),th) is 3V, V(GS),th minimum variation range is ±0.5V, which can facilitate the design of new device import and drive, improve the design freedom; Using low threshold voltage and tolerance avoids the use of linear MOSFET mode, reducing drive voltage and idle loss.

     In addition, compared to CoolMOS C3, the new line has a 60% improvement in grid charge, significantly reducing drive losses, and meets the human Discharge Model (HBM) (Level 2 electrostatic discharge sensitivity) standards, ensuring electrostatic discharge (ESD) robustness, thereby reducing ESD related equipment failures and increasing production.