The CCPAK1212 package will once again enhance the performance of the Nexperia power MOSFETs

     Nexperia has announced 16 new 80 V and 100 V power MOSFETs. These products are packaged in an innovative copper clip CCPAK1212 package with industry-leading power density and superior performance. Innovative copper clamp designs capable of carrying high currents, lower parasitic inductance and excellent thermal performance make these devices ideal for motor control, power supplies, renewable energy systems and other power-hungry applications. The family also includes application-specific MOSFETs (ASFETs) designed for AI server hot swap functionality. Mosfets in CCPAK packages offer top and bottom cooling options for high power density and reliable solutions. All device packages are registered with JEDEC and come with Nexperia interactive data books for seamless integration.

     The benchmark PSMN1R0-100ASF is A 0.99mΩ 100V power MOSFET capable of carrying 460 A current and reaching 1.55KW of dissipated power in a CCPAK1212 package that occupies only 12mm×12mm board space. The top-cooling version of the PSMN1R0-100CSF offers similar performance.

     Superior performance is closely related to the internal structure of the device. The "CC" in CCPAK1212 stands for Copper Clip, which means that the wafer of the power MOSFET is sandwiched between two copper sheets, with a drain heat sink on one side and a source clip on the other. The optimized design eliminates the need for lead bonding, thereby reducing on-resistance and parasitic inductance, increasing maximum current rating and improving thermal performance.

     The CCPAK1212 NextPower 80/100 V MOSFETs are suitable for power-hungry industrial applications that focus on high efficiency and reliability, including brushless direct current (BLDC) motor control, switching power supplies (SMPS), battery management systems (BMS), and renewable energy storage. These MOSFETs in a single high-power package reduce the need for parallel connection, simplify the design, and provide a more compact and cost-effective solution.

     Nexperia's CCPAK1212 series also includes a number of new application-specific MOSFETs (ASFETs) designed to enable hot swap operations for increasingly powerful AI servers. The safe Working area (SOA) of these devices is enhanced to provide excellent thermal stability during linear mode transitions.

     This family of devices offers top and bottom heat dissipation options, giving engineers the flexibility to choose the heat dissipation path, especially for designs that cannot be cooled directly through the PCB due to the limitations of some heat sensitive devices.

     Chris Boyce, General manager of Nexperia Products, said: "Despite our market-leading performance, we know that some customers are hesitant to design in relatively new packages. For this purpose, we have registered CCPAK1212 with the JEDEC Standards Organization with reference number MO-359. We took a similar approach when we introduced the first LFPAK MOSFET package in the early years, so there are now many compatible devices on the market. When innovation creates real value for customers, the market responds quickly."

     All new CCPAK1212 MOSFET devices are supported by a range of advanced design tools, including thermal compensation simulation models. Nexperia has also upgraded the traditional PDF data book to a user-friendly interactive data book with the addition of a graph-to-CSV feature that enables engineers to download, analyze and interpret the data behind each device's key features. This not only simplifies the design process, but also increases confidence in the design choice.

     Nexperia plans to apply the CCPAK1212 package to all voltage ranges of power MOSFETs and its vehicle grade AEC-Q101 compliant portfolio to achieve ultra-high currents and excellent thermal performance to meet the changing needs of next-generation systems.