
GlobalFoundries (GF) has secured a $9.5 million federal grant from the United States to accelerate the production of gallium nitride (GaN) semiconductors on silicon at its Essex Junction, Vermont, facility. This investment helps GF to be more in line with large-scale GaN chip production, which is necessary for high-performance, energy-efficient applications in sectors such automotive, data centers, IoT, aerospace, and military, thereby strengthening its position in the technological scene.
A step toward large-scale production
Among the most promising technologies to meet the rising demand for high frequencies and power control is gallium nitride. Offering better performance than conventional silicon semiconductors, GaN chips can manage severe temperatures and high voltages. As important as the approach to large-scale manufacturing of 200 mm GaN wafers is dependability testing, therefore this financing will enable GF to add new techniques, equipment, and prototype capabilities to its already strong portfolio of intellectual property in GaN.
A more resilient national ecosystem
The funding comes from the Department of Defense’s Trusted Access Program Office (TAPO), which recognizes the strategic importance of GaN technologies not only for the commercial sector but also for national security. From 2020 until the present, GF has gotten more than $80 million in federal support for GaN technology research and development, a dedication that shows the relevance of this technology to U.S. economic and military policies.
Vermont as global GaN hub
Accredited as a Trusted Foundry by the United States, the Essex Junction facility serves as the core of GF’s GaN program and boasts a long-standing tradition of producing 200 mm semiconductors. In July 2024, GF bought Tagore Technology’s GaN Power portfolio, so establishing the GF Kolkata Power Center in Kolkata, India, so strengthening this leadership. This center rapidly advances field research and development by tightly coordinating with Vermont’s activities.
A view on the future of GaN
The announcement of this additional financing emphasizes the development of gallium nitride as a fundamental component of next technologies. From power optimization in electric cars to radio frequency management for telecommunications, its uses are wide and vital; it also finds use in important sectors like military. Large-scale production does not, however, come without difficulties in the route. It calls for major infrastructural and skill development, as well as equipment purchase. GlobalFoundries seems to be positioned to tackle these difficulties. Supported by the U.S. government and with an eye toward creating a strong GaN ecosystem, the firm is laying a strong basis to satisfy the demand of the worldwide market. Federal funding combined with GF’s creative ability might greatly help consolidate U.S. technological superiority in the important semiconductor sector.
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