The Nexperia LFPAK MOSFET family's new 8 x 8 mm devices increase power density by up to 48 times

     Nexperia has announced new packages for its MOSFET and LFPAK families. The package, combined with its latest silicon technology, produces a 40 V MOSFETs and offers a low RDS(on) of 0.7 mΩ. The LFPAK88 device replaces larger power packages such as the D²PAK and D²PAK-7. The 8 x 8 mm size reduces the space area by 60% and the overall size by 64%.

     Unlike other packages where performance is often limited by internal bonding wires, the LFPAK88 device uses a copper clamp and welded chip connection structure to reduce resistance and thermal resistance for good current diffusion and heat dissipation. In addition, the thermal conductivity of the copper clip helps reduce hot spot formation, resulting in improved avalanche energy (Eas) and linear mode (SOA) performance. The proven high continuous current rating ID (Max) 425 A combined with a low RDS(on) 0.7 mΩ in a small package provides a market-leading power density of up to 48 times better than a D2PAK packaged device.

     In addition, the LFPAK88, with its low-stress gull-wing pin, is a more rugged and heat-resistant package with a reliability level more than twice the performance required by the AEC-Q101. Neil Massey, Nexperia product Manager, commented: "Combining LFPAK88 with our silicon technology allows MOSFET to achieve up to 48 times the power density of D2PAK. This proves that Nexperia, the inventor of LFPAK, is still a leader in this technology."

     The LFPAK88 MOSFET is divided into two categories: automotive grade (BUK) and industrial grade (PSMN). Automotive applications including braking, power steering, reverse battery protection and DC-DC converters can save space by using this package, which is particularly useful in dual redundant circuits. Industrial applications include battery-powered power tools, specialty power supplies, and telecommunications infrastructure equipment.