The first to apply specific MOSFeTs to hot swap, reducing footprint

     Nexperia has released its first 80V and 100V application-specific mosfet (asfet) for hot swap with an enhanced security operating area in a compact 8mm x 8mm LFPAK88 package. These new ASFeTs are fully optimized for demanding hot-swappable and soft-boot applications and meet the 175C requirements for use in advanced telecommunications and computing devices.

     By leveraging its decades of expertise in advanced silicon and packaging development, the company's PSMN2R3-100SSE (100V, 2.3mOhm N-channel ASFET) is a major addition to the portfolio, Delivers low RDS(on) and strong linear mode (safe working zone) performance in a compact 8mm x 8mm footprint, tailored to meet the needs of demanding hot swap applications.

     The company also released the PSMN1R9-100SSE (80V, 1.9mOhm), an 80V ASFET designed to respond to the growing trend of using 48V power rails in computing servers and other industrial applications, where environmental conditions require the mosfet to have a low BVDS rating. Asfets that enhance SOA are becoming increasingly popular in hot-plug and soft-launch applications.

     When capacitive loads are introduced into the live backplane, its strong linear mode performance is essential to effectively and reliably manage inrush. Low RDS(on) is also critical to minimize I2R losses when the ASFET is fully on. Despite the lower RDS(on) and smaller package size, this third generation of enhanced SOA technology delivers a 10% improvement in SOA performance (33A vs 30A@50V@1ms) compared to previous generations of D2PAK packages.

     Another of the company's innovations is the new ASFeTs for hot swap that fully characterize SOA at both 25℃ and 125℃. A well-tested hot SOA curve is provided in the data table, which eliminates the need for design engineers to perform hot degradation calculations and extends useful hot SOA performance. Until now, AsFeTs for hot swap and computing applications have been limited to the larger D2PAK package (16mm x 10mm).

     The LFPAK88 package is an excellent alternative to the D2PAK, offering up to 60% space efficiency. The device has an RDS(on) of only 2.3mOhm, which is at least 40% lower than currently available devices. This not only increases the LFPAK88's power density by a factor of 58, but also provides twice as high ID(maximum) current rating, ultra-low thermal resistance and resistance.

     This release combines the best features of the company's advanced silicon and copper clip packaging technology, combined with a smaller footprint, lower RDS(on) and enhanced SOA performance. It also offers 25V, 30V, 80V and 100V AsFeTs in 5mm x 6mm LFPAK56E packages, optimized for low-power applications requiring a smaller PCB footprint.