The new 60 V MOSFETs are the industry's first for standard gate drive circuits

     Vishay Intertechnology today announced the introduction of a new 60 V TrenchFET fourth-generation N-channel power MOSFET-SISS22DN, the industry's first device for standard gate drive circuits, reducing the maximum on-resistance to 4 m at 10 V . Available in a heat-enhanced 3.3mm x 3.3mm PowerPAK 1212-8S package. Vishay SiliconixSiSS22DN is specifically designed to improve the efficiency and power density of power conversion topologies with a gate charge of only 22.5 nC while having a low output charge (QOSS).

     Unlike logic level 60 V devices, SiSS22DN increases typical VGS(th) and Miller platform voltages for circuits with gate drive voltages higher than 6 V. The optimal dynamic characteristics of the device reduce dead time and prevent breakdown in synchronous rectifier applications. SiSS22DN 4.8% lower on resistance than the second-ranked product in the industry - on par with the leading logic level devices - QOSS at 34.2 nC, QOSS multiplied by on-resistance, i.e. zero voltage switch (ZVS) or switchgear topology power conversion design, The important value factor (FOM) of the MOSFET reaches its optimal level. To achieve higher power density, the device uses 65% less PCB space than similar solutions in 6 mm x 5 mm packages.

     SiSS22DN has improved specifications to minimize on-off and on-off losses for greater efficiency across multiple power management system components, including AC/DC and DC/DC topologies for synchronous rectifier, DC/DC converter main side switches, buck to boost converter half-bridge MOSFET power stages, As well as communication and server power supply OR-ing functions, power tools and industrial equipment motor drive control and circuit protection, battery protection and charging of battery management modules.