The new ICeGaN GaN power IC enables ultra-high efficiency in data centers, inverters and industrial switching power supplies

     Cambridge GaN Devices (CGD), a fabless semiconductor company, has developed a range of energy-efficient gallium nitride (GaN) power devices in a bid to make electronics more environmentally friendly. CGD today introduced the ultra-low on-resistance (RDS(on)) ICeGaN™ GaN Power IC with a novel chip and package design, bringing the benefits of GaN to high-power applications such as data centers, inverters, motor drives and other industrial power supplies. The new ICeGaN™ P2 Series IC RDS (on), down to 25 mΩ, supports multi-kW power applications and delivers ultra-high efficiency.

     ANDREA BRICCONI | CGD Chief Commercial Officer: "The explosive growth of artificial intelligence has led to a significant increase in energy consumption, prompting data center system designers to prioritize Gans for high-power, efficient power solutions. This new family of GaN power ics from CGD enables our customers and partners to achieve power densities in excess of 100 kW/ rack in their data centers, meeting the requirements of the latest TDP (Thermal Design Power) trends in high-density computing. In motor control inverters, developers are using Gans to reduce heat and get smaller, longer-lasting system power. The above two markets are the current target markets of CGD ICeGaN power ics. The simplified gate driver design and reduced system cost, combined with an advanced high-performance package, make the P2 Series ics an excellent choice for these applications."

     The ICeGaN power IC integrates Miller clamping to eliminate breakdown losses during high-speed switching and enables 0V shut-off to minimize backchannel losses, outperforming discrete eMode GaN and other existing technologies. The new package offers improved thermal resistance as low as 0.28K /W, comparable to or better than any other product on the market. Its bipolar pin design in the double-sided DHDFN-9-1 (dual radiator DFN) package helps optimize PCB layout and simple parallel for scalability, allowing customers to easily handle applications up to multiple kW. The design of the new package not only increases the output, but also makes the side wet pad technology easier for optical inspection.

     Users can now request samples of CGD's new P2 series ICeGaN power ics. The series includes four RDS (on) products with 25 mΩ and 55 mΩ and current ratings of 60 A and 27 A. Products are available in a 10 mm x 10 mm package DHDFN-9-1 and a BHDFN-9-1 (bottom radiator DFN) package. Like all CGD ICeGaN products, the P2 series can be driven with any standard MOSFET or IGBT driver.