Navitas Semiconductor now offers fifth-generation high-speed GeneSiC SiC power diodes for demanding data center, industrial motor drive, solar and consumer applications. The 650v rated merged pin Schottky (MPS) diode features a unique pin Schottky construction that provides "low built-in voltage bias" (" low knee ") for excellent robustness under all load conditions with the highest efficiency. Applications include PFCS in server/telecom power supplies, industrial motor drivers, solar inverters, LCD/LED TVS and lighting.
"We deliver reliable, leading-edge performance for on-demand applications such as AI and Chat GPT data center power," noted Dr. Ranbir Singh, Executive Vice President of Navitas SiC. "Efficient, cool, reliable operation ensures long life, gives power designers peace of mind, and optimizes their prototyping and time-to-market." The novel design combines the best characteristics of PiN and Schottky diode structures to provide a minimum forward voltage (VF) drop of only 1.3V, high surge current capability (IFSM), and minimal temperature-independent switching losses.
Proprietary thin-chip technology further reduces VF and enhances heat dissipation for cooler operation. For the first time, these diodes are available in a low surface mount QFN package. To provide reliable operation in critical applications, the gen-5, 650V MPS diode has best-in-class robustness and robustness, high surge current and avalanche capability, and 100% avalanche (UIL) production testing.
Capable from 4A to 24A, in a range of surface mount (QFN, D2-PAK) and through-hole (TO-220, TO-247) packages, the gexxmps06x series MPS diodes cover 300W to 3000w applications and a variety of circuits. Such as solar panel boost converters and continuous current mode PFCS in game consoles. With a "common cathode" configuration, the TO-247-3 package provides great flexibility for high power density and material bill reduction in staggered PFC topologies.
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