The second series GaN integrated circuits offer best-in-class robustness and efficiency

     Cambridge GaN Devices has released the second series of its ICeGaN 650V GaN HEMT series, offering industry-leading robustness, ease of use and maximum efficiency. The H2 Series ICeGaN HEMTs use the company's intelligent gate interface to virtually eliminate the typical E-mode GaN weakness, providing greatly improved overvoltage robustness, higher anti-noise thresholds, dV/dt suppression, and ESD protection.

     Like the previous generation of devices, the new 650V transistor is driven similar to Si MosfeTs, eliminating the need for complex and inefficient circuits in favor of commercially available industrial grid drivers. Finally, the device provides QG 10 times lower and QOSS 5 times lower than the silicon component. This allows them to significantly reduce switching losses, size and weight at high switching frequencies. This results in a class leading efficiency performance that is a full 2% higher than the industry's best Si MosFeTs in SMPS applications.

     Giorgia Longobardi, CEO and co-founder of GaN Devices in Cambridge, commented: "CGD has established a leadership position in innovation with the H2 series ICeGaN. Independent research at Virginia Tech has proven that ICeGaN is the industry's most robust and durable GaN device, and that they can be driven just like standard silicon mosFETs in terms of ease of use, thus eliminating the learning curve that can slow market acceptance. GaN's efficiency is well known, and ICeGaN's performance at full load was impressive."

     The new series uses innovative NL3(no-load and light-load) circuits integrated with GaN switches on the chip to achieve record low power consumption. The advanced clamping structure and integrated Miller clamping (also on-chip) eliminate the need for negative grid voltages, achieving true zero-volt shut-off and enhancing dynamic RDS(ON) performance. These E-mode (usually off) single-chip GaN HEMTs integrate single-chip integrated interfaces and protection circuits for unmatched grid reliability and design simplicity.

     Finally, the current detection feature reduces power consumption and allows direct connection to ground to optimize cooling and EMI. Longobardi continued, "CGD addresses all the challenges that stand in the way of new technology adoption. In addition, we are now ready to deliver H2 series ICeGaN transistors through a mature supply chain to satisfy the mass market."