Three devices are provided, each capable of driving both high - and low-side n-channel power mosFeTs

     The Texas Instruments DRV8329 three-phase brushless DC gate driver provides three devices, each capable of driving both high side and low side n-channel power mosFeTs. The DRV8329 uses an internal charge pump to generate the correct gate drive voltage and a bootstrap circuit to enhance the high-side mosFETs. A trickle charging pump is also included to provide 100% duty cycle.

     The grid - driven structure enables the peak grid - driven current to reach 1A source and 2A sink. The TI DRV8329 grid driver can be powered on a single power supply and supports a wide input power range of 4.5V to 60V. The 6x and 3x PWM modes on the DRV8329 can be simply connected to the controller circuit.

     The device incorporates a precise 3.3V LDO that powers the external controller and provides reference for the CSA. Device configuration Settings can be configured using hardware (H/W) pins. The DRV8329 device incorporates a low-side current sensing amplifier that allows the summation of current sensing currents from all three driver stages.

     Low static current is achieved by turning off most of the internal circuitry to provide a low power sleep mode. The device has undervoltage locking, GVDD fault, MOSFET overcurrent, MOSFET short circuit, overtemperature and other internal protection functions. The fault condition is indicated on the nFAULT pin.