Toshiba Introduces New Silicon Carbide MOSFET Modules to Help Improve Industrial Equipment Efficiency and Miniaturization

     Toshiba Electronic Devices & Storage Corporation announced that it has launched a module for industrial applications that integrates the newly developed dual-channel silicon carbide (SiC) MOSFET chip (with 3300V and 800A characteristics) - "MG800FXF2YMS3".

     To achieve a channel temperature of 175°C, the product is packaged in an iXPLV (Intelligent Flexible Package Low Voltage) package with silver sintered internal bonding technology and high placement compatibility. This module fully addresses the need for efficient and compact equipment in industrial applications such as rail vehicles and renewable energy power generation systems.