Toshiba Launches the Third Generation SiC MOSFET for More Efficient Industrial Equipment

     Toshiba Electronic Components and Storage Devices Co., Ltd. announced the launch of a new power device - the third generation silicon carbide (SiC) MOSFET "TWxxNxxxC series". The series has low on resistance, which can significantly reduce switching loss. The 10 products in this series include 5 1200V products and 5 650V products

     The on resistance per unit area (RDS (ON) A) of the new product has decreased by about 43%, which makes the "on resistance of drain source" × Gate leakage charge (RDS (ON) × Qgd) "is reduced by about 80% , which is an important indicator reflecting the relationship between conduction loss and switching loss. In this way, the switching loss can be reduced by about 20% , and the on resistance and switching loss can be reduced at the same time. Therefore, new products help to improve equipment efficiency.