Toshiba has unveiled a new MOSFET gate driver IC to help reduce device size

     Toshiba Electronic Components and Memory Devices Co., Ltd. announced the launch of the "TCK421G", the first product in its new "TCK42xG series" MOSFET gate drive ics for 20V power lines. This family of devices is designed to control the gate voltage (based on the input voltage) of an external N-channel MOSFET with overvoltage locking capability. The new product will be available for bulk shipment starting today.

     In conjunction with an external N-channel MOSFET connected back to back, the TCK421G is suitable for power multiplexer circuits or load switching circuits configured with reverse current blocking. It has a built-in charge pump circuit that supports a wide input voltage range of 2.7V to 28V and operates intermittently to provide a stable voltage for the gate-source voltage of the external MOSFET. This mode allows high current switching.

     TCK421G is packaged with WCSP6G, which is one of the smallest packages in the industry. This allows TCK421G to achieve high-density mounting on small devices such as wearables and smartphones, thereby reducing the size of the above devices.

     Toshiba will continue to develop TCK42xG series, and plans to launch a total of six products. The over-voltage locking of TCK42xG series will support 5V to 24V input voltage. It can provide 5.6V and 10V gate output voltages for different gate source voltages in external MOSFETs. Overvoltage lockout and gate output voltage can be selected according to user's specific equipment.