Toshiba introduces 150V N-channel power MOSFET with the latest generation process

     Toshiba Electronic Components and Storage Devices Co., Ltd. announced the launch of 150V N channel power MOSFET -- "TPH9R00CQH". The device adopts the latest generation of "U-MOSX-H" process and is suitable for switching power supply of industrial equipment, including data center power supply and communication base station power supply.

     Compared with the 150V product TPH1500CNH using the current generation of "U-MOS Ⅷ - H" process, the drain source on resistance of TPH9R00CQH decreases by about 42%. The structural optimization of the new MOSFET promotes the balance between the source drain on resistance and the two charge characteristics , thereby achieving excellent low loss characteristics. In addition, the reduction of peak voltage between drain and source during switching operation is helpful to reduce electromagnetic interference (EMI) of switching power supply. This product provides two types of surface mount packaging: SOP Advance and more widely used SOP Advance (N).

     At the same time, Toshiba also provides various tools to support the circuit design of switching power supply. In addition to the G0 SPICE model that can quickly verify the circuit function, it now also provides a high-precision G2 SPICE model that can accurately reproduce the transient characteristics.