Toshiba introduces a new 1200V silicon carbide MOSFET for high efficiency power supplies

     Toshiba Electronic Components and Storage Corporation announced the launch of a new 1200V Silicon carbide (SiC) MOSFET- "TW070J120B". The product is for industrial applications (including large capacity power supply), the power MOSFET uses silicon carbide (SiC) this new material, compared with conventional silicon (Si) MOSFET, IGBT products, with high voltage, high-speed switching and low on-resistance characteristics, which is conducive to reducing power consumption and streamlining the system.

     The new product adopts Toshiba's second-generation chip design and production , which can improve the reliability of silicon carbide MOSFET, and realizes the characteristics of low input capacitance, low gate input charge, and low drain-source on-resistance. Compared with Toshiba's 1200V silicon-insulated gate bipolar transistor (IGBT) "GT40QR21", the "TW070J120B" has about 80% lower switching loss, about 70% shorter switching time (drop time), and is able to provide low on-voltage at no more than 20A drain current .

     Its gate threshold voltage is set in the higher voltage range of 4.2V to 5.8V, helping to reduce the risk of failure (accidental opening or closing). In addition, the built-in silicon carbide Schottky barrier diode (SBD) with low forward voltage also helps to reduce power loss.

     In industrial applications such as high-capacity AC-DC converters, photovoltaic inverters, and high-capacity bi-directional DC-DC converters, this new MOSFETs will not only increase efficiency by reducing power losses, but will also contribute to reducing device size.