Toshiba introduces in-vehicle 40V N-channel power MOSFETs in a new package

     Toshiba Electronic Components and Storage Corporation announced the launch of two on-board 40V n-channel power MOSFETs - "XPJR6604PB" and "XPJ1R004PB" ,in Toshiba's new S-TOGLTM (Small Transistor profile Gull-wing pin) package and U-MOS IX-H process chip. Both are in Toshiba's new S-TOGLTM package (7.0mm x 8.44mm), which features a taperless construction that integrates the source connector with the external pin. The multi-pin structure of the source level pins reduces package resistance.

     Applications with high safety levels, such as autonomous driving systems, ensure reliability through redundant design, so they integrate more devices and require more surface space than standard systems. Therefore, to further reduce the size of automotive equipment, a power MOSFET that can be affixed at a high current density is required.

     When combined with the Toshiba U-MOS IX-H process, the S-TOGLTM package achieves a significant 11% reduction in on-resistance compared TO the Toshiba TO-220SM (W) package product [2], which has the same thermal resistance characteristics. The new package also reduces the surface area required by approximately 55% compared TO the TO-220SM (W) package. In addition, the products in the new package can provide 200A drain current rating, which is higher than Toshiba's similarly sized DPAK+ package (6.5mm×9.5mm[1]) products, thus achieving high current. Overall, the S-TOGLTM package enables a high density and compact layout, reducing the size of automotive equipment and helping to achieve high heat dissipation.

     Since automotive equipment may operate in extreme temperature environments, the reliability of surface-mount solder points is a key consideration. The S-TOGLTM package uses gull-wing pins to reduce surface stress and improve solder joint reliability. When multiple devices need to be connected in parallel to provide greater operating current for an application, Toshiba supports the two new products to be shipped in groups of gate threshold voltages [3]. This ensures that the design uses the same group of products, thus reducing characteristic bias.