Toshiba's SiC is a technology designed for high efficiency power applications

     Toshiba's third generation 650 V and 1200 V silicon carbide (SiC) MOSFETs are designed for high-power industrial applications such as 400 V and 800 VAC input AC/DC power supplies, photovoltaic (PV) inverters, and bidirectional DC/DC converters for uninterruptible power supplies (UPS).

     These MOSFETs help reduce power consumption and improve power density, because SiC technology allows devices to provide higher withstand voltage, faster switching and lower on resistance. Toshiba's third-generation chip design provides enhanced reliability. The 650 V product has a 4850 pF input capacitor (CISS, typical), a 128 nC low gate input charge (QG, typical), and a drain source on resistance (RDS (ON), typical) of only 15 m Ω.

     In addition, 1200 V products provide the same low 6000 pF input capacitance (CISS, typical value), 158 nC grid input charge (QG, typical value), and 15 m Ω drain source on resistance (RDS (ON), typical value). Both 650 V and 1200 V SiC MOSFETs are packaged in an industry standard three lead TO-247 package