Transphorm GAns for HZZH 98% efficient power modules

     Transphorm, a leader in the design and manufacture of the highest reliability products, has developed the first high-voltage gallium nitride (GaN) power semiconductor components that comply with JEDEC- and AEC-Q101 standards. At present, it has been confirmed that Hangzhou Zhongheng Electric Co., Ltd (HZZH) has developed an ultra-efficient power module based on GaN. The 3kW ZHR483KS uses Transphorm's GaN device to achieve 98% efficiency, making it the most efficient GaN driver module in the telecom industry to date. Original design manufacturers (ODMs) can swap ZHR483KS, which offer standardized output connector configurations, with existing same-power modules for a highly reliable, high-performance solution at a lower overall system cost.

     The ZHR483KS is HZZH's first GAN-based power solution and the lead product in a new product line. The input voltage range of the module is 85 volts to 264 volts, while its output voltage range is 42 volts to 58 volts. Transphorm's TPH3205WS-GaN device is used for interlacing bridge-less totem PFCS to achieve 98% half-load efficiency. The GaN device reduces the switching loss and drive loss of the power module, so the ZHR483KS performs better than previous modules using super junction silicon MOSFETs.

     Dr. Guo, Chief Technology Officer of HZZH, said: "We were looking for a power transistor that would help us develop a more efficient and cost-effective solution for our customers. We considered silicon carbide devices, but could not achieve the expected advantages under low voltage conditions. We then reviewed devices from several GaN manufacturers and ultimately selected Transphorm's GaN field-effect transistor (FET) for reliability, device cost, and simplicity of implementation."

     Transphorm's GaNFET is a dual-chip enhanced mode field effect transistor available in both standard TO-XXX packages and common off-the-shelf driver driven PQFN modules. The current Gen III series offers the highest threshold voltage (4V) and highest gate robustness (±20V) in the GaN semiconductor industry. As a result, customers can easily design highly reliable GaN solutions to realize the technology's high power density benefits.

     Kenny Yim, Vice President of Sales for Transphorm Asia, said: "Transphorm develops each generation of GaN platforms with four key factors in mind: reliability, driveability, designability and repeatability. HZZH believes that our customers need these four factors to break the market, so they choose us as their GaN partner, and we are proud of that. It was through this collaboration that our Gans were designed into a variety of different multi-kilowatt power systems, setting industry records. We expect HZZH to continue to innovate as we continue to collaborate on products in the future."