Transphorm introduces the fourth-generation GaN platform and SuperGaN Power FETs

The first JEDEC-certified device in Transphorm's SuperGaN family is the TP65H300G4LSG. This is a 650V GaN FET in a PQFN88 package with an on-resistance of 240 milliohm. The second SuperGaN device is the TP65H035G4WS, also a 650V GaN FET, in a TO-247 package with a 35 milliohm on-resistance. These devices are currently in the sample phase and will be released in the second and third quarters, respectively. Their target applications include adapters, servers, telecommunications, a wide range of industries, and renewable energy. System designers can evaluate this technology in Transphorm's 4kW bridge-less totem pole AC-DC evaluation board TDTTP4000W066C-KIT.

In designing the fourth generation, Transphorm's engineering team drew on the experience of previous product production records and continuously sought to improve performance, manufacturability and cost reduction to design new products with substantial improvements in simplicity. The benefits of the new platform's patented technology, which enhances the inherent high performance of Transphorm GAns and simplifies assembly and application, will be a catalyst for the success of the SuperGaNTM brand.

Powered by its patented technology, SuperGaN Gen IV's benefits include:

● Improved performance: The fourth-generation product has a flatter efficiency curve and higher values, and its FOM excellence (RON * QOSS) has improved by approximately 10 percentage points.

● Simpler design: The switch node buffer circuit is no longer needed for high working current, simplifying the application of the fourth generation product in the design.

● Enhanced the ability to resist surge current: the limitation of switching current by the built-in continuous diode function in the half-bridge is eliminated.

● Lower device costs: Design innovations and patented technologies of the fourth generation of products also simplify the packaging of devices, thereby reducing costs and bringing the price of TransphormGaN closer to silicon transistors.

● Proven stability/reliability: The fourth-generation 35 milliohm FETs have the same gate stability and immunity as the Transphorm third-generation devices at +/ -20 Vmax and 4 V.

Philip Zuk, Transphorm's vice president of global technology Marketing and North American sales, said: "We expect Transphorm's SuperGaNTM FETs to continue to influence the next generation of power electronics in the same way that the development of silicon-based hyperjunction MOSFETs has. By delivering better performance and increasing the overall return on investment for users, our fourth-generation GaN platform is creating new design opportunities in other power levels. The fact that we were able to reduce losses without sacrificing reliability and reduce initial equipment investment to levels close to those of previous users with silicon-based products shows that GaN's position in the market is strengthening."

Transphorm designs, manufactures, and markets high-performance, highly reliable gallium nitride [GaN] semiconductor power devices for high-voltage power conversion applications. With an extensive intellectual property portfolio of more than 1,000 patents granted and pending worldwide, Transphorm is one of the first IDM companies in the industry to produce JEDEC and AEC-Q101 certified GaN FETs. Thanks to its vertically integrated business model, Transphorm is able to innovate at every stage of product and technology development - including design, manufacturing, device and application support.