Ultra-low power, high density, non-volatile memory is ideal for mobile and wearable designs

     The stmicroelectronics M95P32 Ultra Low Power 32Mbit SPI Page EEPROM is optimized for mobile and wearable design. M95P32 32Mbit SPI Page EEPROM features a rich feature set, low power consumption, and high memory density.

     The device combines patented e-STM 40nm non-volatile memory (NVM) unit technology with intelligent page architecture to bring the benefits of high memory density, byte flexibility, and high persistence of simplified data logging to the firmware. The M95P3 also features fast read, erase, and program cycles, reducing manufacturing costs and application downtime by supporting fast upload and download. Fast boot and four-output reading allow faster application wake up.

     M95P32 EEPROM provides byte and page write instructions of up to 512 bytes. The write instruction consists of self - timed automatic erase and program operation, thus realizing flexible data byte management. The device also accepts the page/block/sector/chip erase command to set memory to the erase state. You can then use a 512-byte page face for fast programming in memory, further optimized with a "page program with buffer load" to hide SPI communication latency.

     An all-in memory designed for ultra-low power consumption, efficient data logging, and fast firmware upload/download, the STMicroelectronics M95P32 32Mbit SPI Page EEPROM simplifies NVM integration, reduces BOM costs, and increases power efficiency.