United SiC UF4C/SC 1200V Fourth generation SiC FET

     UF4C and UF4SC 1200V silicon carbide (SiC) FET of UnitedSiC (now acquired by Qorvo). As a wide range of high-performance SiC FET series products, this fourth generation device has excellent on resistance characteristics and is suitable for power solutions in mainstream 800V bus architecture, such as electric vehicle vehicle charger, industrial battery charger, industrial power supply, DC-DC solar inverter and other applications

     UF4C/SC SiC FET provides designers with a variety of on resistance and packaging options. The on resistance (RDS (on)) of 1200 V SiC FET is 23m Ω to 70m Ω, which can be packaged with three lead TO-247-3L or four lead TO-247-4L. TO-247-4L package adopts Kelvin grid, which has ultra-low grid charge and excellent reverse recovery characteristics. It is very suitable for switching inductive load and any application requiring standard grid drive.

     All devices of UF4C/SC series can be safely driven with standard 0V to 12V or 15V grid drive voltage, so that they can become suitable substitutes for silicon IGBT, FET or super junction devices without changing the grid drive voltage. Other main features of UF4C/SC SiC FET include: maintaining good threshold noise tolerance through real 5V threshold voltage, excellent reverse recovery characteristics and built-in ESD grid protection clamping.