UnitedSiC Launches High Performance and Efficient 750V SiC FET Product Portfolio for Power Design Expansion

     Qorvo announced the launch of seven 750V silicon carbide (SiC) FETs packaged with surface mount D2PAK-7L. With this packaging scheme, Qorvo's SiC FET is tailored for the rapid growth of vehicle chargers, soft switching DC/DC converters, battery charging (fast DC and industrial) and IT/server power applications. They use thermal performance enhanced packaging to provide an ideal solution for high power consumption applications that require maximum efficiency, low conduction loss, and high cost performance.

     At 650/750V, the RDS (on) of the fourth generation UJ4C/SC series is 9 milliohms (mohm), achieving a low level in the industry. The rated resistance of this series is 9, 11, 18, 23, 33, 44 and 60 milliohms. This wide selection provides engineers with more device options and supports greater flexibility to achieve an ideal cost/efficiency balance while maintaining rich design margins and circuit robustness. These devices use unique common source and common gate SiC FET technology. SiC JFET in normally open state and Si MOSFET are packaged together to generate SiC FET in normally closed state. These devices provide excellent RDS x A quality factor, which can minimize the conduction loss in small size bare chips.

     Anup Bhalla, chief engineer of United SiC (now acquired by Qorvo), said: "The D2PAK-7L package can reduce the inductance in the compact internal connection circuit. In addition to the accompanying Kelvin source connection, it can achieve low switching loss, support higher operating frequency, and improve the power density of the system. In addition, these devices are mounted with silver sintered chips to maximize the heat removal from standard PCB and IMS substrates through liquid cooling, so the thermal resistance is very low."