UnitedSiC Launches the Industry's Best 6m Ω SiC FET

     United SiC, a leading manufacturer of silicon carbide (SiC) power semiconductors, has released the industry's best 750V, 6m Ω devices, thus responding to the demand of power designers for SiC FETs with higher performance and efficiency. The RDS (on) value of this 6m Ω new device is less than half of the nearest SiC MOSFET competitive product, and it also provides a robust μ S Rated short-circuit withstand time. The products released  include nine new device/package options in the 750V SiC FET series, rated at 6, 9, 11, 23, 33, and 44m Ω.

     All devices are packaged with TO-247-4L, and 18, 23, 33, 44 and 60m Ω devices are also packaged with TO-247-3L. This 750V expansion series complements the existing 18 and 60m Ω devices. It provides designers with more device solutions and achieves greater design flexibility. Therefore, the best cost performance trade-off can be achieved while maintaining sufficient design margin and circuit robustness.

     The 4th generation SiC FET of UnitedSiC adopts a "common source and common gate" topology, which integrates a SiC JFET internally and encapsulates it with a silicon MOSFET. The combination of these two technologies provides all the advantages of wide band gap technology - it can realize high-speed, low loss and high temperature operation, while maintaining simple, stable and robust grid drive, and has integrated ESD protection. These advantages can be quantified by the quality factor (FoM), such as RDS (on) × A. This indicator measures the conduction loss per unit chip area. In this indicator, the 4th generation SiC FET can reach the lowest value in the market at both high and low wafer temperatures. RDS(on) × The FOM EOSS/QOSS is very important in hard switching applications. The value of the 4th generation SiC FET is half that of the nearest competitor.

     RDS(on) × COSS (tr), the FoM, is very important in soft switching applications. If the rated voltage of the United SiC device is 750V, compared with the rated voltage of the competitor device of 650V, this value of the former is about 30% lower than that of the latter. For hard switching applications, the integrated diode of SiC FET is superior to the competitor's Si MOSFET or SiC MOSFET technology in terms of recovery speed and forward voltage drop. The other advantages included in the fourth generation technology are that the thermal resistance from the bare chip to the shell is reduced through advanced wafer thinning technology and silver sintering process. These features can achieve maximum power output in demanding applications, while achieving low chip temperature rise.

     The new UnitedSiC SiC FET is very suitable for challenging emerging applications with its latest improvements in switching efficiency and on resistance. These include traction drives in electric vehicles and on-board and off board chargers, as well as renewable energy inverters, power factor correction, telecommunications converters, and all phases of unidirectional and bidirectional power conversion in all AC/DC or DC/DC power conversion. Mature applications can also benefit from using this device - efficiency can be easily improved by its backward compatibility with Si MOSFET and IGBT gate drivers and mature TO-247 packages.

     As Chris Dries, President and CEO of UnitedSiC, said, "The fourth generation of UnitedSiC FET is undoubtedly the performance leader in the competitive technology, and has set a new benchmark for wide band gap switching technology. The new product series now provides more choices for all performance and budget specifications as well as wider applications."