UnitedSiC announced the launch of six new D2PAK-7L silicon carbide FETs

     United Silicon Carbide Corporation (UnitedSiC), a leading global manufacturer of silicon carbide (SiC) power semiconductors, has announced the continued expansion of its FET portfolio with the launch of six new 650V and 1200V products, all of which are packaged in the industry-standard D2PAK-7L surface mount package. Available in 30, 40, 80, and 150mΩ versions, these latest SiC FETs represent another major step in accelerating the expansion of sic devices into applications such as server and telecom power supplies, industrial battery chargers and power supplies, electric vehicle on-board chargers, and DC-DC converters.

     The D2PAK-7L SiC FETs support significantly increased switching speeds, improved gate driver loop performance through Kelvin source connections, and industry-leading heat dissipation. Through the use of the silver Sintering technology (Ag Sintering), core adhesion can be achieved on conventional PCBS as well as complex insulating metal substrates (IMS). In addition, they have excellent creepage distance (6.7mm) and electrical clearance capability (6.1mm), which means that the highest operating safety is ensured even at higher voltages.

     Anup Bhalla, vice president of engineering at UnitedSiC, said: "With the fast switching capability of these latest FETs, combined with the excellent thermal performance provided by silver sintering technology, we will be able to continue to bring performance, reliability, size and layout benefits to power designers."

     UnitedSiC's FET-Jet CalculatorTM fully supports the new D2PAK-7L devices, and with this free online resource, engineers can evaluate the different operating parameters required for specific applications and make detailed performance comparisons. You can then quickly and confidently determine which SiC solution is best suited to your specific design requirements.