UnitedSiC introduces a new junction Schottky diode that sets a new benchmark for SiC inrush current robustness

     UnitedSiC, an American manufacturer of SiC power semiconductors, announced the launch of four new junction Schottky (JBS) diodes to complement its FET and JFET transistor products. The UJ3D 1200V and 1700V devices boast the industry's best inrush current performance and are part of the company's third-generation SiC Merged-PiN-Schottky (MPS) diodes.

     These SiC SB diodes have a V, F, x, Q, c factor of quality (FoM) that is at least 12-15% better than diodes from other manufacturers, and these are highly optimized switching speeds for power system designs that require increased efficiency and ultra-fast speeds. The gap between the anode and cathode is greater than 8.8mm, which means they are better suited to cope with highly polluted environments where voltage transients can occur. In the case of high current, the novel PN junction structure makes it possible to inject additional carriers. As a result, the diode can withstand higher inrush currents (up to 12 times the rated current) than competing devices.

     There is a 1700V 25A rated option, and three 1200V devices with 10V, 20A and 50A ratings. All SiC diodes are fully compliant with the AEC-Q101 automotive standard and come in compact TO247-2L package form and bare chip form. Applications that will benefit the most from these new SiC diodes include fast-charging electric vehicle (EV) charging access points, industrial motor drives, and solar inverters.

     As Anup Bhalla, Vice President of Engineering at UnitedSiC, explains: "With the unique characteristics of UJ3D1725K2, we can offer our customers reliable, space-saving, cost-effective SiC diodes with better performance levels and guaranteed quality, backed by high performance." Mass production."