UnitedSiC(now Qorvo) announces the launch of the 1200V 4th generation SiC FET with industry-leading quality factors

     Qorvo, a leading provider of RF solutions for mobile applications, infrastructure and aerospace and defense applications, announced the launch of its next-generation 1200V silicon carbide (SiC) field-effect transistor (FET) family, which offers industry-leading performance characteristics in on-resistance. The new UF4C/SC series 1200V 4th generation SiC FETs are ideally suited to the mainstream 800V bus architecture commonly seen in EV on-board chargers, industrial battery chargers, industrial power supplies, DC solar inverters, welders, uninterruptable power supplies and induction heating applications.

     Anup Bhalla, Chief Engineer of power devices at UnitedSiC (Qorvo), said: "This higher performance fourth generation product expands our 1200V portfolio and allows us to better serve engineers who are increasing bus design voltages to 800V. Such voltage increases are inevitable in electric vehicles, and these new devices have four different RDS(on) levels, helping designers select the best SiC for each design."

     All RDS(on) products (23, 30, 53, and 70 milliohm) come in an industry standard 4-pin Kelvin source-to-247 package, providing cleaner switches at higher performance levels. The 53 and 70 milliohm devices also come in TO-247 3 pin packages. This series of parts achieves excellent reliability on the basis of well-controlled thermal properties, which are the result of advanced silver sintered grain connection and advanced wafer thinning processes.