UnitedSiC's 4th generation 750 V SiC FET

     United SiC's UJ4C/SC fourth generation SiC FET series new generation power supply design The United SiC fourth generation 750 V SiC FET picture is based on the unique common source and common grid configuration, the rated voltage is 750 V, and provides 6 m Ω to 60 m Ω product selection. The product can provide excellent performance indicators, reduce conduction loss, achieve higher efficiency at higher speeds, and improve overall cost efficiency. Eon and Eoff losses of each given RDS (on) have been improved, and switching performance and Qrr have also been improved.

     In addition, the reduction of Eoss and Coss also reduces the total loss. The product can be safely driven with a standard 0 V to 12 V or 15 V grid drive voltage. Real 5V threshold voltage can maintain good threshold noise tolerance, and like previous generations of products, these SiC FETs can operate under all typical Si IGBT, Si MOSFET and SiC MOSFET drive voltages. The product also includes a built-in ESD grid protection clip. Several devices have been certified by AEC-Q101.