Vishay Intertechnology introduces new 3rd generation 1200 V SiC Schottky diodes

     Vishay Intertechnology has unveiled 16 new Gen 3 1,200 V silicon carbide (SiC) Schottky diodes. The Vishay intertechnology has unveiled 16 new Gen 3 1,200 V Silicon Carbide (sic) Schottky diodes Semiconductors devices utilize a merged PIN Schottky (MPS) design to enhance efficiency and reliability in switching power systems. This design combines high surge current robustness with low forward voltage drop, capacitive charge, and reverse leakage current.

     In the TO-220AC 2L, TO-247AD 2L, and TO-247AD 3L through-hole and D2PAK 2L (TO-263AB 2L) surface-mount packages, the newly released next-generation SiC diodes are available in a range of currents from 5 A to 40 A. The diodes provide a low capacitance charge of 28 nC, and their MPS structure, which is characterized by a backside that has been thinned using laser annealing technology, results in a reduced forward voltage drop of 1.35V.

     Furthermore, the devices exhibit a low typical reverse leakage current of about 2.5 µA at 25 °C, which minimizes conduction losses and guarantees optimal system efficiency even under light loads and idle conditions. Unlike diodes with extremely high switching speeds, the Gen 3 devices have almost no residual charge that needs to be dissipated, resulting in even better efficiency.

     The diodes are commonly used in various applications such as AC/DC power factor correction (PFC), DC/DC ultra high-frequency output rectification in FBPS and LLC converters for solar power inverters, energy storage systems, industrial drives and equipment, and data centers. These devices are designed to withstand hostile environments and have operating temperatures up to +175 °C. They also have forward surge ratings of up to 260 A, making them highly durable. Furthermore, the diodes in the D2PAK 2L package are equipped with a molding compound that has a high Comparative Tracking Index (CTI) of at least 600, which guarantees exceptional electrical insulation even at higher voltages.