Vishay Introduces New 650 V SiC Schottky Diodes to Improve Energy Efficiency in High Frequency Applications

     Vishay Intertechnology, Inc introduces ten new 650 V silicon carbide (SiC) Schottky diodes. Vishay Semiconductors devices are designed in a Hybrid PIN Schottky (MPS) structure to improve efficiency in high frequency applications by reducing switching losses and not being affected by temperature variations - allowing diodes to operate at higher temperatures.

     The reference address of this article: http://www.eepw.com.cn/article/202101/422465.htm
The MPS diodes released today can shield the electric field generated by the Schottky barrier, reduce leakage current, and improve inrush current capability through hole injection. Compared to silicon Schottky devices, the new diodes handle the same current with only a slight increase in forward voltage drop and significantly improved robustness.

     The devices are suitable for power factor correction (PFC) freewheeling, buck-boost freewheeling, and LLC converter output rectification in applications such as servers, telecom equipment, UPS, and solar inverters, providing designers with high flexibility for system optimization. The diodes are available in 2L TO-220AC and TO-247AD 3L packages, are rated from 4 A to 40 A, and operate at high temperatures of +175 °C.